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师资队伍

首页 > 师资队伍 > 教师 > 集成电路科学与工程

张冠张

职称：助理教授
电话：0755-26033013
办公室：A314
Email：kcchang@pkusz.edu.cn
实验室网站：
研究方向：1. 阻变存储器 ；2. 超临界流体 ；3. 类神经型态器件 ；4.GaN器件 ；5.生物器件 ；6.薄膜晶体管。
职称 助理教授 电话 0755-26033013
办公室 A314 Email kcchang@pkusz.edu.cn
研究方向 1. 阻变存储器 ；2. 超临界流体 ；3. 类神经型态器件 ；4.GaN器件 ；5.生物器件 ；6.薄膜晶体管。 实验室网站

导师与研究领域、方向：

  • 北京大学深圳研究生院 威斯尼斯人娱乐官方网站 助理教授（博导）

  • 国立中山大学 材料与光电学系 博士后研究员

  • 国立中山大学 材料与光电学系 博士

  • （导师：施敏 院士 美国国家工程院、中国工程院外籍院士）

  • 东海大学 化学系 学士

本人近年来致力于各类新型电子器件的研发及其物理机制的探讨，并首创运用超临界流体技术修复材料和改善器件性能。目前研究的主要内容包括：

1.阻变存储器件（器件与电路集成）：研究包括材料选择、器件结构优化设计、理论模型。实现的阻变存储器的性能和可靠性达到了世界最先进水平。同时也不断深化与产业界相关合作，共同推进阻变存储器在更多领域的进步和发展。

2.超临界流体技术（微纳电子器件修饰）：超临界流体态是一种介于液体和气体之间的物质的第四相态，利用交叉学科的背景优势，深入开展了超临界流体与电子器件和材料之间的一系列研究，成功修复包括RRAM、TFT、GaN、HEMT、CNT等在内的多种器件内部缺陷（尤其对制备完成之后的器件依然有效）、修饰了材料的特性。研究主题不仅致力于创新性，同时兼顾绿色环保和可持续发展，并且有多项应用技术突破。

3.类神经形态器件（器件与应用集成）：研究开发多种基于晶体管的具有类神经突触特性的器件，对神经形态的各类可塑性进行深入探讨，同时开发先进神经形态算法，在软硬件结合方式下，以最低的功耗和代价实现对人脑神经网络的模拟。

4.先进显示（微显示芯片与集成）：开发高性能的薄膜晶体管的制备工艺和优化条件，多方位提升薄膜晶体管的性能，以匹配其在先进显示领域的应用。

5.GaN器件：研究包括宽禁带材料GaN(氮化镓)、SiC(碳化硅)器件物理、结构与工艺。

6.生物电子集成（生物可兼容性器件）：研究开发基于各类生物材料、生物兼容的材料的电子器件，并应用在仿生、能源、传感等领域。

讲授课程：

 1. 半导体器件与工艺

 2. 半导体测试与分析

承担的代表性项目：

 

1. 国家自然科学基金面上项目（2020.01-2024.12）

2. 国家自然科学基金重大项目培育计划（2021.01-2024.12）

3. 广东省自然科学基金面上项目（2019.10-2021.10）

4. 深圳市稳定支持计划（2020.09-2023.09）

学术成果：

 本人近年(2009~迄今)共发表SCI国际期刊133篇，H-index为24，被引用总次数:1402次。其中代表性论文统计如下：（更新版详见实验室主页）

·Materials Today（IF：32.072）1篇(Invited review article)

·Nano Letters (IF：12.727) 1篇

·ACS APPLIED MATERIALS & INTERFACES (IF: 8.901) 4篇

·Nanoscale (IF: 7.315) 8篇

·Applied Physics Letters（IF：3.4）23篇

·IEEE Electron Device Letter (IF: 3.639) 38篇

相关研究成果并获得美国专利10项，中国台湾专利19项，中国专利公开8项。

代表著作目录列表(Publication List)

 

代表作30篇SCI国际期刊:*:通讯作者

1.K. C. Chang, L. D. Hu, K. Qi, L. Li*, X. N. Lin, S. D Zhang*, Z. W. Wang, Y. C. Lai, H. J. Liu and T. P. Kuo, “Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors”,Nanoscale,2021, 13(11), 5700-5705. (IF:7.315)

2. L. D. Hu, H. J. Lou*, W. T. Li,K. C. Chang*and X. N. Lin*, “Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure”,IEEE Transactions on Electron Devices,2021, 68(1), 399-404.

3. K. Qi#, L. Lei#,K. C. Chang*, X. N. Lin*, H. J. Liu, Y. C. Lai, H. T. Zheng, G. Y. Huang and T. P. Kuo, “A supercritical removal method: the rapid elimination of impurities in polymethyl-methacrylate at near room temperature and a mechanism investigation of insulating property improvements”,Journal of Materials Chemistry C,2020, 8(44), 15664-15668. (IF:7.059)

4.K. C. Chang, T. J. Dai, L. Lei*, X. N. Lin*, S. D. Zhang, Y. C. Lai, H. J. Liu and Y. E. Syu, “Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory”,Nanoscale,2020, 12(43), 22020-22074. (IF:7.315)

5. L. Li,K. C. Chang*, X. N. Lin*, Y. C. Lai, R. Zhang and T. P. Kuo, “Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process”,Nanoscale,2020, 12(29), 15721-15724. (IF:7.315)

6. L. Li,K. C. Chang*, C. Ye*, X. Lin, R. Zhang, Z. Xu, W. Xiong, Y. Zhou and T. P. Kuo, “An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: When Hafnium Meets ITO in Electrode”,Nanoscale,2020, 12(5), 3267-3272. (IF: 7.315)

7. C. Ye, Z. Xu,K. C. Chang*, L. Li*, X. N. Lin, R. Zhang, Y. Zhou, W. Xiong and T. P. Kuo, “Hafnium Nanocrystals in HfTiO Compound Film Bring Excellent Performance for Flexible Selector in Memory Integration”,Nanoscale,2019, 11(43), 20792-20796. (IF: 7.315)

8. L. Li,K. C. Chang*, X. N. Lin, R. Zhang and J. H. Lou, “Insulating Property Improvement of Polyimide in Devices by Low‐Temperature Supercritical Fluids”,Advanced Electronic Materials,2019,5(12), 1900580. (IF:6.831)

9. Y. T. Tseng, P. H. Chen, T. C. Chang*,K. C. Chang*, T. M. Tsai, C. C. Shih, H. C. Huang, C. C. Yang, C. Y. Lin, C. H. Wu, H. X. Zheng, S. D. Zhang and S. M. Sze, “Solving the Scaling Issue of Increasing Forming Voltage in Resistive Access Memory Using High-k Spacer Structure”,Advanced Electronic Materials,2017, 3(9), 1700171. (IF:6.831)

10. P. H. Chen, T. C. Chang*,K. C. Chang*, T. M. Tsai, C. H. Pan, C. C. Shih, C. H. Wu, C. C. Yang, W. C. Chen, J. C. Lin, M. H. Wang, H. X. Zheng, M. C. Chen and S. M. Sze, “Effects of Plasma Treatment Time on Surface Characteristics of Indium-Tin-Oxide Film for Resistive Switching Storage Applications”,Applied Surface Science,2017, 414, 224-229. (IF:5.141)

11. C. Y. Lin, P. H. Chen, T. C. Chang*,K. C. Chang*, S. D. Zhang, T. M. Tsai, C. H. Pan, M. C. Chen, Y. T. Su, Y. T. Tseng, Y. F. Chang, Y. C. Chen, H. C. Huang and S. M. Sze, “Attaining Resistive Switching Characteristics and Selector Properties by Varying Forming Polarities in a Single HfO2-based RRAM Device with a Vanadium Electrode”,Nanoscale,2017, 9(25), 8586-8590. (IF:7.315)

12. Y. H. Lu, T. C. Chang*, L. H. Chen, Y. S. Lin, X. W. Liu, J. C. Liao, C. Y. Lin, C. H. Lien,K. C. Chang*and S. D. Zhang, “Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs”,IEEE Electron Device Letters,2017, 38(7), 835-838. (IF:3.639)

13. C. Y. Lin, T. C. Chang*, K. J. Liu, L. H. Chen, J. Y. Tsai, C. E. Chen, Y. H. Lu, H. W. Liu, J. C. Liao andK. C. Chang*, “Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs”,IEEE Electron Device Letters,2017, 38(6), 705-707. (IF:3.639)

14. P. Y. Liao, T. C. Chang*, Y. J. Chen, W. C. Su, B. W. Chen, L. H. Chen, T. Y. Hsieh, C. Y. Yang,K. C. Chang*, S. D. Zhang, Y. Y. Huang, H. M. Chang and S. C. Chiang, “The Effect of Device Electrode Geometry on Performance After Hot-Carrier Stress in Amorphous In-Ga-Zn-O Thin Film Transistors with Different Via-Contact Structures”,Applied Physics Letters,2017, 110(20), 202103. (IF:3.4)

15. C. H. Wu, T. C. Chang*, T. M. Tsai,K. C. Chang*, T. J. Chu, C. H. Pan, Y. T. Su, P. H. Chen, S. K. Lin, S. J. Hu and S. M. Sze, “Effect of Charge Quantity in Conduction Mechanism of High- and Low-Resistance States During Forming Process in a One-Transistor-One-Resistor Resistance Random Access Memory”,Applied Physics Express,2017, 10(5), 054101. (IF:2.758)

16. B. W. Chen, T. C. Chang*,K. C. Chang*, Y. J. Hung, S. P. Huang, H. M. Chen, P. Y. Liao, Y. H. Lin, H. C. Huang, H. C. Chiang, C. L. Yang, Y. Z. Zheng, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, T. T. J. Wang and T. C. Chang, “Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors”,ACS Applied Materials & Interfaces,2017, 9(13), 11942-11949. (IF:8.901)

17. Y. C. Chien, T. C. Chang*, H. C. Chiang, H. M. Chen, Y. C. Tsao, C. C. Shih, B. W. Chen, P. Y. Liao, T. Y. Chu, Y. C. Yang, Y. J. Hung, T. M. Tsai andK. C. Chang*, “Roel of H2O Molecules in Passivation of a-InGaZnO Thin Film Transistors”,IEEE Electron Device Letters,2017, 38(4), 469-472. (IF:3.639)

18. C. H. Pan, T. C. Chang*, T. M. Tsai,K. C. Chang*, P. H. Chen, S. W. Chang-Chien, M. C. Chen, H. C. Huang, H. Q. Wu and N. Deng, “Engineering Interface-Type Resistance Switching Based on Forming Current in ITO/Ga2O3: ITO/TiN Resistance Random Access Memory: Conduction Mechanisms, Temperature Effects, and Electrode Influence”,Applied Physics Letters,2016, 109(18), 183509. (IF:3.4)

19. T. M. Tsai,K. C. Chang*, T. C. Chang*, R. Zhang, T. Wang, C. H. Pan, K. H. Chen, H. M. Chen, M. C. Chen, T. Y. Tseng, P. H. Chen, I. Lo, J. C. Zheng, J. C. Lou and S. M. Sze, “Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory”,IEEE Electron Device Letters,2016, 37(4), 408-411. (IF:3.639)

20.K. C. Chang*, T. M. Tsai, T. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, M. C. Chen, H. C. Huang, W. Zhang, C. Y. Lin, Y. T. Tseng, H. C. Lin, J. C. Zheng and S. M. Sze, “Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2Fluid”,IEEE Electron Device Letters,2015, 36(6), 558-560.(IF:3.639)

21. Y. T. Tseng, T. M. Tsai, T. C. Chang, C. C. Shih,K. C. Chang*, R. Zhang, K. H. Chen, J. H. Chen, Y. C. Li, C. Y. Lin, Y. C. Hung, Y. E. Syu, J. C. Zheng and S. M. Sze, “Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory”,Applied Physics Letters,2015, 106(21), 213505. (IF:3.4)

22.K. C. Chang*, T. C. Chang, T. M. Tsai, R. Zhang, Y. C. Hung, Y. E. Syu, Y. F. Chang, M. C. Chen, T. J. Chu, H. L. Chen, C. H. Pan, C. C. Shih, J. C. Zheng and S. M. Sze, “Physical and chemical mechanisms in oxide-based resistance random access memory”,Nanoscale Research Letters,2015, 10. (IF:3.559)

23.K. C. Chang*, T. M. Tsai, T. C. Chang, K. H. Chen, R. Zhang, Z. Y. Wang, J. H. Chen, T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao and S. M. Sze, “Dual Ion Effect of The Lithium Silicate Resistance Random Access Memory”,IEEE Electron Device Letters,2014, 35(5), 530-532. (IF:3.639)

24.K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, T. J. Chu, H. L. Chen, C. C. Shih, C. H. Pan, Y. T. Su, P. J. Wu and Sze S.M, “High Performance, Excellent Reliability Multifuctional Graphene Oxide Doped Memristor Achieved by Self-Protective Compliance Current Structure”,2014IEEE International Electron Devices Meeting (IEDM).

25.K. C. Chang, J. H. Chen, T. M. Tsai, T. C. Chang*, S. Y. Huang, R. Zhang, K. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, K. H. Liao, Y. H. Tai, T. F. Young, S. M. Sze, C. F. Ai, M. C. Wang and J. W. Huang, “Improvement Mechanism of Resistance Random Access Memory with Supercritical CO2Fluid Treatment”,Journal of Supercritical Fluids,2014, 85, 183-189. (IF:3.536)

26.K. C. Chang, J. W. Huang*, T. C. Chang, T. M. Tsai, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, D. H. Bao and S. M. Sze, “Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2buffer layer”,Nanoscale Research Letters, 2013, 8, 523. (IF:3.559)

27.K. C. Chang, T. M. Tsai*, R. Zhang, T. C. Chang, K. H. Chen, J. H. Chen, T. F. Young, J. C. Lou, T. J. Chu, C. C. Shih, J. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, M. C. Chen, J. J. Wu, Y. Hu and S. M. Sze, “Electrical Conduction Mechanism of Zn:SiOxResistance Random Access Memory with Supercritical CO2Fluid Process”,Applied Physics Letters,2013, 103(8), 083509. (IF:3.4)

28.K. C. Chang*, C. H. Pan, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih and T. J. Chu,“Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2Fluid Treatment”,IEEE Electron Device Letters,2013, 34(5),617-619.(IF:3.639)

29.K. C. Chang *, R. Zhang, T. C. Chang, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang and Y. C. Pan,“Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices”,IEEE Electron Device Letters,2013, 34(5),677-679.(IF:3.639)

30.K. C. Chang*, T. M. Tsai, T. C. Chang, H. H. Wu, K. H. Chen, J. H. Chen, T. F. Young, T. J. Chu, J. Y. Chen and C. H. Pan, “Low Temperature Improvement Method on Zn:SiOxResistive Random Access Memory Devices”,IEEE Electron Device Letters,2013,34 (4), 511-513. (IF:3.639)

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